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XP131A0616SR Datasheet

  • XP131A0616SR

  • Power MOSFET

  • 4頁

  • TOREX

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XP131A0616SR
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N-Channel Power MOS FET
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DMOS Structure
Power MOSFET
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Applications
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Notebook PCs
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Cellular and portable phones
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On-board power supplies
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Li-ion battery systems
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Low On-State Resistance: 0.016鈩?MAX
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Ultra High-Speed Switching
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SOP-8 Package
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General Description
The XP131A0616SR is a N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
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Features
Low on-state resistance:
Rds(on)=0.016鈩?Vgs=4.5V)
Rds(on)=0.022鈩?Vgs=2.5V)
Rds(on)=0.045鈩?Vgs=1.5V)
Ultra high-speed switching
Operational Voltage:
1.5V
High density mounting:
SOP-8
u
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Pin Configuration
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
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Pin Assignment
PIN
NUMBER
1~3
4
5~8
PIN
NAME
S
G
D
FUNCTION
Source
Gate
Drain
SOP-8
(TOP VIEW)
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Equivalent Circuit
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Absolute Maximum Ratings
PARAMETER
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
20
鹵8
10
30
10
2.5
150
-55~150
Ta=25:
UNITS
V
V
A
A
A
W
:
:
1
2
3
4
N-Channel MOS FET
(1 device built-in)
8
7
6
5
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
Note: When implemented on a glass epoxy PCB
345

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