鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Transition frequency
*
Noise figure
Collector output capacitance
(Common base, input open circuited)
Forward transfer gain
*
Maximum unilateral power gain
*
Symbol
I
CBO
I
EBO
h
FE
f
T
NF
C
ob
錚
21e
錚?/div>
2
G
UM
Conditions
V
CB
=
10 V, I
E
=
0
V
EB
=
1 V, I
C
=
0
V
CE
=
8 V, I
C
=
20 mA
V
CE
=
8 V, I
C
=
20 mA, f
=
1.5 GHz
V
CE
=
8 V, I
C
=
7 mA, f
=
1.5 GHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
CE
=
8 V, I
C
=
20 mA, f
=
1.5 GHz
V
CE
=
8 V, I
C
=
20 mA, f
=
1.5 GHz
7
1
2
3
Min
Typ
Max
1
1
Unit
碌A
碌A
錚?/div>
GHz
dB
pF
dB
dB
50
7.0
120
8.5
2.2
0.6
9
10
300
3.0
1.0
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
0.2
鹵0.1
5藲
Publication date: June 2003
SJJ00217BED
1
1
2
3
