Composite Transistors
XP06501
(XP6501)
Silicon NPN epitaxial planer transistor
Unit: mm
0.425
1.25鹵0.1
0.425
0.2鹵0.05
For general amplification
2.1鹵0.1
0.65
G
G
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
2.0鹵0.1
I
Features
0.65
1
2
3
6
5
4
0.9鹵0.1
G
2SD0601A(2SD601A)
脳
2 elements
0.7鹵0.1
0 to 0.1
0.2鹵0.1
I
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Rating
Emitter to base voltage
of
element Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
(Ta=25藲C)
Ratings
60
50
7
100
200
150
150
鈥?5 to +150
Unit
V
V
V
mA
mA
mW
1 : Emitter (Tr1)
2 : Emitter (Tr2)
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Collector (Tr1)
EIAJ : SC鈥?8
S鈥揗ini Type Package (6鈥損in)
Marking Symbol:
5N
Internal Connection
1
Tr1
6
5
4
藲C
藲C
2
3
Tr2
I
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Forward current transfer h
FE
ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
(Ta=25藲C)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
h
FE
(small/large)
*1
V
CE(sat)
f
T
C
ob
Conditions
I
C
= 10碌A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10碌A, I
C
= 0
V
CB
= 20V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
CE
= 10V, I
C
= 2mA
V
CE
= 10V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= 鈥?mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
160
0.5
0.99
0.1
150
3.5
0.3
V
MHz
pF
min
60
50
7
0.1
100
460
typ
max
Unit
V
V
V
碌A
碌A
Ratio between 2 elements
Note.) The Part number in the Parenthesis shows conventional part number.
0.12
鈥?.02
I
Basic Part Number of Element
0.2
+0.05
1
1
2
3
