鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
2擄C
Parameter
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise figure
Reverse transfer impedance
Reverse transfer capacitance
(Common emitter)
Symbol
V
BE
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
f
T
NF
Z
rb
C
re
Conditions
V
CE
= 鈭?0
V, I
C
= 鈭?
mA
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CB
= 鈭?0
V, I
E
=
1 mA
I
C
= 鈭?0
mA, I
B
= 鈭?
mA
V
CB
= 鈭?0
V, I
E
=
1 mA, f
=
200 MHz
V
CB
= 鈭?0
V, I
E
=
1 mA, f
=
5 MHz
V
CB
= 鈭?0
V, I
E
=
1 mA, f
=
2 MHz
V
CE
= 鈭?0
V, I
C
= 鈭?
mA, f
=
10.7 MHz
150
2.8
22
1.2
50
鈭?/div>
0.1
Min
Typ
鈭?/div>
0.7
鈭?/div>
0.1
鈭?00
鈭?0
220
Max
Unit
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
錚?/div>
V
MHz
dB
鈩?/div>
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2004
SJJ00213BED
0.2
鹵0.1
5藲
1
XP06435相關(guān)型號(hào)PDF文件下載
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