Composite Transistors
XP06401
(XP6401)
Silicon PNP epitaxial planer transistor
Unit: mm
(0.425)
For general amplification
0.2
鹵0.05
6
5
4
0.12
+0.05
鈥?.02
1.25
鹵0.10
2.1
鹵0.1
1
2
3
q
(0.65) (0.65)
1.3
鹵0.1
2.0
鹵0.1
10擄
0.9
鹵0.1
q
2SB0709A(2SB709A)
脳
2 elements
0 to 0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Rating
Emitter to base voltage
of
element Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
(Ta=25藲C)
Ratings
鈥?0
鈥?0
鈥?
鈥?00
鈥?00
150
150
鈥?5 to +150
Unit
V
V
V
mA
mA
mW
1 : Emitter (Tr1)
2 : Emitter (Tr2)
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Collector (Tr1)
EIAJ : SC鈥?8
SMini6-G1 Package
Marking Symbol:
5O
Internal Connection
1
Tr1
6
5
4
藲C
藲C
2
3
Tr2
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Forward current transfer h
FE
ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
(Ta=25藲C)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
h
FE
(small/large)
*1
V
CE(sat)
f
T
C
ob
Conditions
I
C
= 鈥?0碌A, I
E
= 0
I
C
= 鈥?mA, I
B
= 0
I
E
= 鈥?0碌A, I
C
= 0
V
CB
= 鈥?0V, I
E
= 0
V
CE
= 鈥?0V, I
B
= 0
V
CE
= 鈥?0V, I
C
= 鈥?mA
V
CE
= 鈥?0V, I
C
= 鈥?mA
I
C
= 鈥?00mA, I
B
= 鈥?0mA
V
CB
= 鈥?0V, I
E
= 1mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
160
0.5
0.99
鈥?0.3
80
2.7
鈥?0.5
V
MHz
pF
min
鈥?0
鈥?0
鈥?
鈥?0.1
鈥?00
460
typ
max
Unit
V
V
V
碌A
碌A
Ratio between 2 elements
Note) The Part number in the Parenthesis shows conventional part number.
0.9
+0.2
鈥?.1
s
Basic Part Number of Element
5擄
q
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
0.2
鹵0.1
s
Features
1
1
2
3
4
