Composite Transistors
XP05555
(XP5555)
Silicon NPN epitaxial planer transistor
Unit: mm
0.425
1.25鹵0.1
0.425
0.2鹵0.05
For high speed switching
2.1鹵0.1
0.65
G
G
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
2.0鹵0.1
I
Features
0.65
1
2
3
6
5
4
0.9鹵0.1
G
2SC4782
脳
2 elements
0.7鹵0.1
0 to 0.1
0.2鹵0.1
I
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Rating
Emitter to base voltage
of
element Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
C
I
CP
P
T
T
j
T
stg
(Ta=25藲C)
Ratings
25
20
5
200
300
150
150
鈥?5 to +150
Unit
V
V
V
mA
mA
mW
1 : Emitter (Tr1)
2 : Base (Tr1)
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Emitter (Tr2)
6 : Collector (Tr1)
EIAJ : SC鈥?8
S鈥揗ini Type Package (6鈥損in)
Marking Symbol:
EO
Internal Connection
1
Tr1
6
5
4
藲C
藲C
2
3
Tr2
I
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Turn-off time
Storage time
*1
(Ta=25藲C)
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
off
t
stg
*1
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 1V, I
C
= 10mA
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA, I
B
= 1mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
typ
max
0.1
0.1
0.12
鈥?.02
I
Basic Part Number of Element
0.2
+0.05
Unit
碌A(chǔ)
碌A(chǔ)
V
V
MHz
pF
ns
ns
ns
40
0.17
0.76
200
2
17
15
7
200
0.25
1.0
500
4
Switching time measuring circuit
Note.) The Part number in the Parenthesis shows conventional part number.
1
1
2
3
