Composite Transistors
XP05554
Silicon NPN epitaxial planer transistor
Unit: mm
0.425
1.25鹵0.1
0.425
0.2鹵0.05
For high speed switching
2.1鹵0.1
0.65
q
q
q
For high speed switching.
Low collector to emitter saturation voltage V
CE(sat)
.
Two elements incorporated into one package.
2.0鹵0.1
s
Features
0.65
1
2
3
6
5
4
0.2
0.9鹵0.1
s
Basic Part Number of Element
q
0 to 0.1
2SC3757
脳
2 elements
1 : Emitter (Tr1)
2 : Base (Tr1)
3 : Base (Tr2)
0.7鹵0.1
0.2鹵0.1
s
Absolute Maximum Ratings
(Ta=25藲C)
Parameter
Collector to base voltage
Symbol
V
CBO
V
CES
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Ratings
40
40
5
100
300
150
150
鈥?5 to +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
4 : Collector (Tr2)
5 : Emitter (Tr2)
6 : Collector (Tr1)
EIAJ : SC鈥?8
S鈥揗ini Type Package (6鈥損in)
Rating Collector to emitter voltage
of
Emitter to base voltage
element
Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Marking Symbol:
HE
Internal Connection
1
2
3
Tr1
6
5
4
Tr2
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Turn-off time
Storage time
(Ta=25藲C)
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
off
t
stg
Conditions
V
CB
= 15V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 1V, I
C
= 10mA
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA, I
B
= 1mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
450
2
17
17
10
6
90
0.17
min
typ
max
0.1
0.1
200
0.25
1.0
V
V
MHz
pF
ns
ns
ns
Unit
碌A
碌A
0.12
鈥?.02
+0.05
1
1
2
