Composite Transistors
XP05531
Silicon NPN epitaxial planer transistor
Unit: mm
0.425
1.25鹵0.1
0.425
0.2鹵0.05
For high frequency, oscillation and mixing
2.1鹵0.1
0.65
q
q
0.2
q
High transition frequency f
T
.
Small collector output capacitance C
ob
and reverse transfer ca-
pacitance C
rb
.
Two elements incorporated into one package.
2.0鹵0.1
s
Features
0.65
1
2
3
6
5
4
0.9鹵0.1
0 to 0.1
s
Basic Part Number of Element
q
0.7鹵0.1
0.2鹵0.1
2SC3130
脳
2 elements
1 : Emitter (Tr1)
2 : Base (Tr1)
3 : Base (Tr2)
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of
Emitter to base voltage
element
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
(Ta=25藲C)
Ratings
15
10
3
50
150
150
鈥?5 to +150
Unit
V
V
V
mA
mW
藲C
藲C
4 : Collector (Tr2)
5 : Emitter (Tr2)
6 : Collector (Tr1)
EIAJ : SC鈥?8
S鈥揗ini Type Package (6鈥損in)
Marking Symbol:
5M
Internal Connection
1
2
3
Tr1
6
5
4
Tr2
s
Electrical Characteristics
Parameter
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
h
FE2
/h
FE1
ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Common base reverse transfer capacitance
Collector to base parameter
(Ta=25藲C)
Symbol
V
CEO
V
EBO
I
CBO
I
CEO
h
FE1
h
FE2
/h
FE1
V
CE(sat)
f
T
C
ob
C
rb
r
bb
.C
C
Conditions
I
C
= 2mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
CE
= 4V, I
C
= 5mA
V
CE
= 4V, I
C
= 100碌A(chǔ)
V
CE
= 4V, I
C
= 5mA
I
C
= 20mA, I
B
= 4mA
V
CB
= 4V, I
E
= 鈥?mA, f = 200MHz
V
CB
= 4V, I
E
= 0, f = 1MHz
V
CB
= 4V, I
E
= 0, f = 1MHz
V
CB
= 4V, I
E
= 鈥?mA, f = 31.9MHz
1.4
1.9
0.9
0.25
11.8
75
0.75
min
10
3
1
10
400
1.6
0.5
2.5
1.1
0.35
13.5
V
GHz
pF
pF
ps
typ
max
Unit
V
V
碌A(chǔ)
碌A(chǔ)
0.12
鈥?.02
+0.05
1
1
2
