Composite Transistors
XP01531
Silicon NPN epitaxial planer transistor
Unit: mm
2.1鹵0.1
0.425
1.25鹵0.1
0.425
0.65
s
Features
q
q
Two elements incorporated into one package.
(Emitter-coupled transistors)
Reduction of the mounting area and assembly cost by one half.
2.0鹵0.1
1
2
3
5
0.65
4
0.2
q
2SC3130
脳
2 elements
0.7鹵0.1
s
Basic Part Number of Element
0.9鹵 0.1
0 to 0.1
0.12
鈥?0.02
0.2鹵0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of
element Emitter to base voltage
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
(Ta=25藲C)
Ratings
15
10
3
50
150
150
鈥?5 to +150
Unit
V
V
V
mA
mW
藲C
藲C
1 : Base (Tr1)
2 : Emitter
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Collector (Tr1)
EIAJ : SC鈥?8A
S鈥揗ini Type Package (5鈥損in)
Marking Symbol:
9F
Internal Connection
1
2
3
4
Tr1
5
Tr2
s
Electrical Characteristics
Parameter
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Collector to base parameter
Common base reverse transfer capacitance
(Ta=25藲C)
Symbol
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
r
bb
'路C
C
C
rb
Conditions
I
C
= 2mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
CE
= 4V, I
C
= 5mA
I
C
= 20mA, I
B
= 4mA
V
CB
= 4V, I
E
= 鈥?mA, f = 200MHz
V
CB
= 4V, I
E
= 0, f = 1MHz
V
CB
= 4V, I
E
= 鈥?mA, f = 31.9MHz
V
CB
= 4V, I
E
= 0, f = 1MHz
1.4
1.9
0.9
11.8
0.25
75
200
min
10
3
1
10
400
0.5
2.5
1.1
13.5
0.35
V
GHz
pF
ps
pF
typ
max
Unit
V
V
碌A(chǔ)
碌A(chǔ)
+0.05
0.2鹵0.05
For high frequency, oscillation and mixing
1
1
2
