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XP01401 Datasheet

  • XP01401

  • Silicon PNP epitaxial planar type

  • 4頁(yè)

  • PANASONIC

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Composite Transistors
XP01401
(XP1401)
Silicon PNP epitaxial planar type
(0.425)
Unit: mm
0.12
+0.05
鈥?.02
For general amplification
鈻?/div>
Features
鈥?/div>
Two elements incorporated into one package
(Emitter-coupled transistors)
鈥?/div>
Reduction of the mounting area and assembly cost by one half
0.20
鹵0.05
5
4
1.25
鹵0.10
2.1
鹵0.1
1
2
3
(0.65) (0.65)
1.3
鹵0.1
2.0
鹵0.1
10藲
鈻?/div>
Basic Part Number
鈥?/div>
2SB0709A (2SB709A)
脳
2
0.9
鹵0.1
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Rating
鈭?0
鈭?0
鈭?
鈭?00
鈭?00
150
150
鈭?5
to
+150
Unit
V
V
V
mA
mA
mW
擄C
擄C
Tr1
1: Base (Tr1)
2: Emitter
3: Base (Tr2)
EIAJ: SC-88A
0 to 0.1
0.9
+0.2
鈥?.1
4: Collector (Tr2)
5: Collector (Tr1)
SMini5-G1 Package
Marking Symbol: 5V
Internal Connection
5
4
5藲
Tr2
1
2
3
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
h
FE
ratio
*
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
h
FE(Small/
Large)
Conditions
I
C
= 鈭?0 碌A(chǔ),
I
E
=
0
I
C
= 鈭?
mA, I
B
=
0
I
E
= 鈭?0 碌A(chǔ),
I
C
=
0
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
CE
= 鈭?0
V, I
C
= 鈭?
mA
V
CE
= 鈭?0
V, I
C
= 鈭?
mA
I
C
= 鈭?00
mA, I
B
= 鈭?0
mA
V
CB
= 鈭?0
V, I
E
=
1 mA, f
=
200 MHz
V
CB
= 鈭?0
V, I
E
=
0, f
=
1 MHz
Min
鈭?0
鈭?0
鈭?
Typ
Max
鈭?/div>
0.1
鈭?00
160
0.50
0.99
鈭?/div>
0.3
80
2.7
鈭?/div>
0.5
460
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
f
T
C
ob
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00145BED
0.2
鹵0.1
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
錚?/div>
V
1

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