鈥?/div>
UNR121M (UN121M)
脳
2 elements
0.9
鹵0.1
s
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Rating
of
element
Total
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
100
150
150
鈭?5
to
+150
Unit
V
V
mA
mW
擄C
擄C
1: Base (Tr1)
2: Emitter
3: Base (Tr2)
EIAJ: SC-88A
0 to 0.1
0.9
+0.2
鈥?.1
4: Collector (Tr2)
5: Collector (Tr1)
SMini5-G1 Package
Marking Symbol: EM
Internal Connection
5
Tr1
4
Tr2
s
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector to base voltage
Collector to emittter voltage
Collector cutoff current
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
Emitter cutoff current
DC current gain
DC current gain ratio
*
Collector to emitter saturation voltage
High level output voltage
Low level output voltage
Input resistance
Resistance ratio
Gain bandwidth product
I
EBO
h
FE
h
FE(Small/Large)
V
CE(sat)
V
OH
V
OL
R
1
R
1
/ R
2
f
T
V
CB
=
10 V, I
E
= 鈭?
mA, f
=
200 MHz
Conditions
I
C
=
10
碌A(chǔ),
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k鈩?/div>
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k鈩?/div>
1
2
5藲
3
Min
50
50
Typ
Max
Unit
V
V
碌A(chǔ)
0.1
0.5
0.2
80
0.5
0.99
0.06
4.9
0.2
鈭?0%
2.2
0.047
150
+30%
0.25
mA
MHz
Note) *: Ratio between one and another device
Note) The part number in the parenthesis shows conventional part number.
Publication date: May 2002
SJJ00235AED
0.2
鹵0.1
V
V
V
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