Composite Transistors
XP0121E
Silicon NPN epitaxial planer transistor
Unit: mm
2.1鹵0.1
0.425
1.25鹵0.1
0.425
0.2鹵0.05
0.12
鈥?0.02
+0.05
For switching/digital circuits
0.65
s
Features
q
q
Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half.
2.0鹵0.1
1
2
3
5
0.65
4
0.9鹵 0.1
q
UN121E
脳
2 elements
0.7鹵0.1
s
Basic Part Number of Element
0.2
0 to 0.1
0.2鹵0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Rating
Collector to emitter voltage
of
element Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25藲C)
Ratings
50
50
100
150
150
鈥?5 to +150
Unit
V
V
mA
mW
藲C
藲C
1 : Base (Tr1)
2 : Emitter
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Collector (Tr1)
EIAJ : SC鈥?8A
S鈥揗ini Type Package (5鈥損in)
Marking Symbol:
AQ
Internal Connection
1
2
3
4
Tr1
5
Tr2
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer h
FE
ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
*1
(Ta=25藲C)
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
h
FE
(small/large)
*1
V
CE(sat)
V
OH
V
OL
R
1
R
1
/R
2
f
T
V
CB
= 10V, I
E
= 鈥?mA, f = 200MHz
Conditions
I
C
= 10碌A, I
E
= 0
I
C
= 2mA, I
B
= 0
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 6V, I
C
= 0
V
CE
= 10V, I
C
= 5mA
V
CE
= 10V, I
C
= 5mA
I
C
= 10mA, I
B
= 0.3mA
V
CC
= 5V, V
B
= 0.5V, R
L
= 1k鈩?/div>
V
CC
= 5V, V
B
= 6V, R
L
= 1k鈩?/div>
鈥?0%
47
2.14
150
MHz
4.9
0.2
+30%
60
0.5
0.99
0.25
V
V
V
k鈩?/div>
min
50
50
0.1
0.5
0.2
typ
max
Unit
V
V
碌A
碌A
mA
Ratio between 2 elements
1
1
2
