Composite Transistors
XN6A554
Silicon NPN epitaxial planer transistor
Unit: mm
For high speed switching
0.65鹵0.15
6
0.95
2.8
鈥?.3
+0.2
+0.25
1.5
鈥?.05
0.65鹵0.15
1
0.3
鈥?.05
0.5
鈥?.05
2.9
鈥?.05
q
q
q
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
Low V
CE(sat)
.
1.9鹵0.1
+0.2
s
Features
5
2
0.95
4
3
s
Basic Part Number of Element
q
1.1
鈥?.1
0.4鹵0.2
s
Absolute Maximum Ratings
(Ta=25藲C)
Parameter
Collector to base voltage
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Ratings
40
40
5
100
300
300
150
鈥?5 to +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Collector (Tr2)
4 : Emitter (Tr2)
5 : Emitter (Tr1)
6 : Base (Tr1)
EIAJ : SC鈥?4
Mini Type Package (6鈥損in)
Rating Collector to emitter voltage
of
Emitter to base voltage
element
Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Marking Symbol:
DT
Internal Connection
6
5
4
Tr1
1
2
3
Tr2
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer h
FE
ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-off time
Turn-on time
Storage time
*1
*2
(Ta=25藲C)
Symbol
I
CBO
I
EBO
h
FE
h
FE
(small/large)
*1
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
off
t
stg
*2
Conditions
V
CB
= 40V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 10mA
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA, I
B
= 1mA
V
CE
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
typ
0 to 0.05
2SC3757
脳
2 elements
0.1 to 0.3
0.8
max
0.1
0.1
0.16
鈥?.06
+0.2
+0.1
1.45鹵0.1
+0.1
+0.1
Unit
碌A(chǔ)
碌A(chǔ)
60
0.5
0.99
0.17
320
0.25
1.0
V
V
MHz
450
2
17
17
10
6
pF
ns
Ratio between 2 elements
Test Circuits
1
1
2
