Composite Transistors
XN6543
Silicon NPN epitaxial planer transistor
Unit: mm
For low-noise amplification (2GHz band)
0.65鹵0.15
6
0.95
2.8
鈥?.3
+0.2
+0.25
1.5
鈥?.05
0.65鹵0.15
1
0.3
鈥?.05
0.5
鈥?.05
2.9
鈥?.05
q
q
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
1.9鹵0.1
+0.2
s
Features
5
2
0.95
4
3
1.1
鈥?.1
q
2SC3904
脳
2 elements
0.4鹵0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of
element Emitter to base voltage
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
(Ta=25藲C)
Ratings
15
10
2
65
200
150
鈥?5 to +150
Unit
V
V
V
mA
mW
藲C
藲C
1 : Collector (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC鈥?4
Mini Type Package (6鈥損in)
Marking Symbol:
9Y
Internal Connection
6
5
4
Tr1
1
2
3
Tr2
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer h
FE
ratio
Transition frequency
Collector output capacitance
Forward transfer gain
Power gain
Noise figure
*1
(Ta=25藲C)
Symbol
I
CBO
I
EBO
h
FE
h
FE
(small/large)
*1
f
T
C
ob
| S
21e
|
2
GUM
NF
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 8V, I
C
= 20mA
V
CE
= 8V, I
C
= 20mA
V
CE
= 8V, I
C
= 20mA
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 8V, I
C
= 20mA, f = 1.5GHz
V
CE
= 8V, I
C
= 20mA, f = 1.5GHz
V
CE
= 8V, I
C
= 7mA, f = 1.5GHz
7
50
0.5
7.0
120
0.99
8.5
0.6
9
10
2.2
3.0
1.0
GHz
pF
dB
dB
dB
min
typ
max
1
1
300
Unit
碌A(chǔ)
碌A(chǔ)
Ratio between 2 elements
0 to 0.05
0.1 to 0.3
0.8
0.16
鈥?.06
s
Basic Part Number of Element
+0.2
+0.1
1.45鹵0.1
+0.1
+0.1
1
1
2
