Composite Transistors
XN6542
Silicon NPN epitaxial planer transistor
Unit: mm
For high frequency amplification, oscillation, and mixing (Tr1),
For medium-frequency amplification (Tr2)
0.65鹵0.15
6
0.95
+0.2
2.8
鈥?.3
1.5
鈥?.05
+0.25
0.65鹵0.15
1
0.3
鈥?.05
0.5
鈥?.05
2.9
鈥?.05
0.95
s
Features
q
q
1.9鹵0.1
+0.2
5
2
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
1.1
鈥?.1
+0.2
4
3
s
Basic Part Number of Element
q
2SC2480+2SC4444
0.4鹵0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Tr1
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector to base voltage
Tr2
Collector to emitter voltage
Emitter to base voltage
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
(Ta=25藲C)
Ratings
30
20
3
50
45
35
4
50
300
150
鈥?5 to +150
Unit
V
V
V
mA
V
1 : Collector (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC鈥?4
Mini Type Package (6鈥損in)
Marking Symbol:
5Z
Internal Connection
6
Tr1
1
2
3
V
V
mA
mW
藲C
藲C
5
4
Tr2
0 to 0.05
0.1 to 0.3
0.8
0.16
鈥?.06
+0.1
1.45鹵0.1
+0.1
+0.1
1