Composite Transistors
XN6537
Silicon NPN epitaxial planer transistor
Unit: mm
For wide-band low-noise amplification
0.65鹵0.15
6
+0.2
2.8
鈥?.3
1.5
鈥?.05
+0.25
0.65鹵0.15
1
0.3
鈥?.05
0.95
2.9
鈥?.05
q
q
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
1.9鹵0.1
+0.2
5
2
0.95
4
3
q
2SC3110
脳
2 elements
1.1
鈥?.1
0.4鹵0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Rating
Emitter to base voltage
of
element Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
(Ta=25藲C)
Ratings
15
12
2.5
30
50
300
150
鈥?5 to +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
1 : Collector (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC鈥?4
Mini Type Package (6鈥損in)
Marking Symbol:
7H
Internal Connection
6
5
4
Tr1
1
2
3
Tr2
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer h
FE
ratio
Transition frequency
Collector output capacitance
Forward transfer gain
Power gain
Noise figure
*1
(Ta=25藲C)
Symbol
I
CBO
I
EBO
h
FE
h
FE
(small/large)
*1
f
T
C
ob
| S
21e
|
2
GUM
NF
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 2V, I
C
= 0
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 10V, I
C
= 20mA, f = 0.8GHz
V
CE
= 10V, I
C
= 20mA, f = 0.8GHz
V
CE
= 10V, I
C
= 5mA, f = 0.8GHz
12
14
1.3
40
0.5
0.99
4.5
1.2
GHz
pF
dB
dB
dB
min
typ
max
100
1
Unit
nA
碌A
Ratio between 2 elements
0 to 0.05
0.1 to 0.3
0.8
0.16
鈥?.06
+0.2
s
Basic Part Number of Element
+0.1
1.45鹵0.1
s
Features
0.5
鈥?.05
+0.1
+0.1
1
1
2
3
