Composite Transistors
XN5553
Silicon NPN epitaxial planer transistor
Unit: mm
For amplification of the low frequency
0.65鹵0.15
+0.2
2.8
鈥?.3
1.5
鈥?.05
6
+0.25
0.65鹵0.15
1
0.3
鈥?.05
0.5
鈥?.05
0.95
2.9
鈥?.05
q
q
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
1.9鹵0.1
+0.2
5
2
0.95
4
3
q
2SD1149
脳
2 elements
1.1
鈥?.1
0.4鹵0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Rating
Emitter to base voltage
of
element Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
(Ta=25藲C)
Ratings
100
100
15
20
50
300
150
鈥?5 to +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
1 : Collector (Tr1)
2 : Emitter (Tr2)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC鈥?4
Mini Type Package (6鈥損in)
Marking Symbol:
4U
Internal Connection
6
5
4
Tr1
1
2
3
Tr2
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Noise voltage
Transition frequency
(Ta=25藲C)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
NV
f
T
Conditions
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CB
= 60V, I
E
= 0
V
CE
= 60V, I
B
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 10mA, I
B
= 1mA
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100K鈩? Function = FLAT
V
CB
= 10V, I
E
= 鈥?mA, f = 200MHz
400
0.05
80
150
min
100
100
15
0.1
1.0
2000
0.2
V
mV
MHz
typ
max
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
0 to 0.05
0.1 to 0.3
0.8
0.16
鈥?.06
+0.2
s
Basic Part Number of Element
+0.1
1.45鹵0.1
s
Features
+0.1
+0.1
1
1
2
