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Composite Transistors

XN04604

(XN4604)

Silicon NPN epitaxial planar type (Tr1)

Silicon PNP epitaxial planar type (Tr2)

For amplification of low-frequency output

鈻?/div>

Features

鈥?/div>

Two elements incorporated into one package

鈥?/div>

Reduction of the mounting area and assembly cost by one half

3

2

1

(0.65)

2.90

+0.20

鈥?.05

1.9

鹵0.1

(0.95) (0.95)

4

5

6

1.50

+0.25

鈥?.05

2.8

+0.2

鈥?.3

Unit: mm

0.16

+0.10

鈥?.06

0.30

+0.10

鈥?.05

鈻?/div>

Basic Part Number

鈥?/div>

2SD1328

+

2SB0970 (2SB970)

0.50

+0.10

鈥?.05

10藲

1.1

+0.2

鈥?.1

鈻?/div>

Absolute Maximum Ratings

T

a

=

25擄C

Parameter

Tr1

Collector-base voltage

(Emitter open)

Collector-emitter voltage

(Base open)

Emitter-base voltage

(Collector open)

Collector current

Peak collector current

Tr2

Collector-base voltage

(Emitter open)

Collector-emitter voltage

(Base open)

Emitter-base voltage

(Collector open)

Collector current

Peak collector current

Overall

Total power dissipation

Junction temperature

Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

T

j

T

stg

Rating

25

20

12

0.5

1

鈭?5

鈭?0

鈭?

鈭?/div>

0.5

鈭?

300

150

鈭?5

to

+150

Unit

V

A

V

Tr2

1: Collector (Tr1)

2: Base (Tr2)

3: Emitter (Tr2)

EIAJ : SC-74

0 to 0.1

1.1

+0.3

鈥?.1

4: Collector (Tr2)

5: Base (Tr1)

6: Emitter (Tr1)

Mini6-G1 Package

Marking Symbol: 5I

Internal Connection

4

5

6

Tr1

V

A

mW

擄C

3

2

1

Note) The part number in the parenthesis shows conventional part number.

Publication date: February 2004

SJJ00084BED

0.4

鹵0.2

5藲

1

型號(hào)

版本

描述

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