Composite Transistors
XN4509
Silicon NPN epitaxial planer transistor
Unit: mm
For high-frequency amplification
0.65鹵0.15
6
0.95
+0.2
2.8
鈥?.3
1.5
鈥?.05
+0.25
0.65鹵0.15
1
0.3
鈥?.05
2.9
鈥?.05
q
q
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
1.9鹵0.1
+0.2
5
2
0.95
4
3
q
2SC4561
脳
2 elements
1.1
鈥?.1
0.4鹵0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of
element Emitter to base voltage
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
(Ta=25藲C)
Ratings
50
50
5
50
200
150
鈥?5 to +150
Unit
V
V
V
mA
mW
藲C
藲C
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC鈥?4
Mini Type Package (6鈥損in)
Marking Symbol:
AO
Internal Connection
6
5
4
Tr1
1
2
3
Tr2
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 10mA, I
B
= 1mA
V
CB
= 10V, I
E
= 鈥?mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
200
0.06
250
1.5
min
50
50
5
0.1
100
500
0.3
V
MHz
pF
typ
max
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
0 to 0.05
0.1 to 0.3
0.8
0.16
鈥?.06
+0.2
s
Basic Part Number of Element
+0.1
1.45鹵0.1
s
Features
0.5
鈥?.05
+0.1
+0.1
1
1
2
