Composite Transistors
XN4130
Silicon PNP epitaxial planer transistor
Unit: mm
For amplification of low frequency output
0.65鹵0.15
6
0.95
2.8
鈥?.3
+0.2
+0.25
1.5
鈥?.05
0.65鹵0.15
1
0.3
鈥?.05
0.5
鈥?.05
2.9
鈥?.05
q
q
Two elements incorporated into one package.
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half.
1.9鹵0.1
+0.2
s
Features
5
2
0.95
4
3
s
Basic Part Number of Element
q
1.1
鈥?.1
0.4鹵0.2
s
Absolute Maximum Ratings
(Ta=25藲C)
Parameter
Collector to base voltage
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Ratings
鈥?5
鈥?5
鈥?
鈥?0.5
鈥?
300
150
鈥?5 to +150
Unit
V
V
V
A
A
mW
藲C
藲C
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC鈥?4
Mini Type Package (6鈥損in)
Collector to emitter voltage
Rating
Emitter to base voltage
of
element Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Marking Symbol:
OF
Internal Connection
6
5
4
Tr1
1
2
3
Tr2
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Base to emitter resistance
(Ta=25藲C)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
BE
Conditions
I
C
= 鈥?0碌A(chǔ), I
E
= 0
I
C
= 鈥?mA, I
B
= 0
I
E
= 鈥?mA, I
C
= 0
V
CB
= 鈥?0V, I
E
= 0
V
CE
= 鈥?V, I
C
= 鈥?00mA*
V
CE
= 鈥?V, I
C
= 鈥?A*
I
C
= 鈥?00mA, I
B
= 鈥?mA
I
C
= 鈥?00mA, I
B
= 鈥?mA
V
CB
= 鈥?0V, I
E
= 50mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
鈥?0%
80
50
鈥?0.2
鈥?0.9
130
22
10
+30%
鈥?0.3
鈥?.3
V
V
MHz
pF
k鈩?/div>
min
鈥?5
鈥?5
鈥?
鈥?0.1
280
typ
max
Unit
V
V
V
碌A(chǔ)
0 to 0.05
UN1130
脳
2 elements
0.1 to 0.3
0.8
*Pulse measurement
0.16
鈥?.06
+0.2
+0.1
1.45鹵0.1
+0.1
+0.1
1
1
2
