Composite Transistors
XN1D873
Silicon N-channel junction FET
Unit: mm
For analog switching
2.8
-0.3
0.65鹵0.15
+0.2
+0.25
1.5
-0.05
5
0.65鹵0.15
1
0.95
2.9
-0.05
q
q
q
0.3
-0.05
0.4鹵0.2
0.16
-0.06
+0.1
1.1
-0.1
+0.2
s
Basic Part Number of Element
q
0.8
s
Absolute Maximum Ratings
Parameter
Rating Gate to drain voltage
of
Drain current
element
Gate current
Total power dissipation
Overall Channel temperature
Storage temperature
Symbol
V
GDS
I
D
I
G
P
T
T
ch
T
stg
(Ta=25藲C)
Ratings
鈥?0
30
10
300
150
鈥?5 to +150
Unit
V
mA
mA
mW
藲C
藲C
1 : Gate (Tr1)
2 : Gate (Tr2)
3 : Source (Tr2)
0 to 0.1
2SK1103
脳
2 elements
0.1 to 0.3
4 : Drain
5 : Source (Tr1)
EIAJ : SC鈥?4A
Mini Type Pakage (5鈥損in)
Marking Symbol:
OC
Internal Connection
5
4
3
2
FET 1
1
FET 2
s
Electrical Characteristics
Parameter
Drain current
Drain current
Gate cutoff current
Gate to source cutoff voltage
Mutual conductance
Drain ON resistance
Common source short-circuit input capacitance
Common source reverse transfer capacitance
Common source short-circuit output capacitance
(Ta=25藲C)
Symbol
V
GDS
I
DSS
I
GSS
V
GSC
gm
R
DS(on)
C
iss
C
rss
C
oss
Conditions
I
G
= 鈥?0碌A(chǔ), V
DS
= 0
V
DS
= 10V, V
GS
= 0
V
GS
= 鈥?0V, V
DS
= 0
V
DS
= 10V, I
D
= 10碌A(chǔ)
V
DS
= 10V, I
D
= 1mA, f = 1kHz
V
DS
= 10mV, V
GS
= 0
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
1.8
鈥?.5
2.5
300
7
1.5
1.5
min
鈥?0
0.2
6.0
鈥?0
鈥?.5
typ
max
Unit
V
mA
nA
V
mS
鈩?/div>
pF
pF
pF
+0.1
Two elements incorporated into one package.
(Drain-coupled FETs)
Reduction of the mounting area and assembly cost by one half.
Low-frequency and low-noise J-FET.
1.9鹵0.1
+0.2
4
0.95
3
2
1.45鹵0.1
s
Features
1
1
2
