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Composite Transistors

XN1601

Silicon PNP epitaxial planer transistor (Tr1)

Silicon NPN epitaxial planer transistor (Tr2)

Unit: mm

For general amplification

2.8

-0.3

0.65鹵0.15

+0.2

+0.25

1.5

-0.05

5

0.65鹵0.15

1

0.95

q

q

Two elements incorporated into one package.

(Emitter-coupled transistors)

Reduction of the mounting area and assembly cost by one half.

2.9

-0.05

1.9鹵0.1

+0.2

4

0.95

3

2

0.3

-0.05

0.4鹵0.2

0.16

-0.06

+0.1

1.1

-0.1

q

2SB709A+2SD601A

0.8

s

Basic Part Number of Element

+0.2

s

Absolute Maximum Ratings

Parameter

Collector to base voltage

Collector to emitter voltage

Tr1

Emitter to base voltage

Collector current

Peak collector current

Collector to base voltage

Collector to emitter voltage

Tr2

Emitter to base voltage

Collector current

Peak collector current

Total power dissipation

Overall Junction temperature

Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

T

T

j

T

stg

(Ta=25藲C)

Ratings

鈥?0

鈥?0

鈥?

鈥?00

鈥?00

60

50

7

100

200

300

150

鈥?5 to +150

Unit

V

V

V

mA

mA

V

V

V

mA

mA

mW

藲C

藲C

1 : Collector (Tr1)

2 : Collector (Tr2)

3 : Base (Tr2)

0 to 0.1

0.1 to 0.3

4 : Emitter

5 : Base (Tr1)

EIAJ : SC鈥?4A

Mini Type Pakage (5鈥損in)

Marking Symbol:

7S

Internal Connection

5

4

3

2

Tr1

1

Tr2

+0.1

1.45鹵0.1

s

Features

1

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