Composite Transistors
XN1504
Silicon NPN epitaxial planer transistor
Unit: mm
For amplification of low frequency output
2.8
-0.3
0.65鹵0.15
+0.2
+0.25
1.5
-0.05
5
0.65鹵0.15
1
0.95
2.9
-0.05
q
q
Two elements incorporated into one package.
(Emitter-coupled transistors)
Reduction of the mounting area and assembly cost by one half.
1.9鹵0.1
+0.2
4
0.95
3
2
0.3
-0.05
0.4鹵0.2
0.16
-0.06
+0.1
1.1
-0.1
q
2SD1938
脳
2 elements
0.8
s
Basic Part Number of Element
+0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Rating
Emitter to base voltage
of
element Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
(Ta=25藲C)
Ratings
50
20
25
300
500
300
150
鈥?5 to +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
0 to 0.1
0.1 to 0.3
4 : Emitter
5 : Base (Tr1)
EIAJ : SC鈥?4A
Mini Type Pakage (5鈥損in)
Marking Symbol:
5S
Internal Connection
5
4
3
2
Tr1
1
Tr2
s
Electrical Characteristics
Parameter
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer h
FE
ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Collector output capacitance
ON Resistance
*1
*2
(Ta=25藲C)
Symbol
V
CEO
I
CBO
I
EBO
h
FE
h
FE
(small/large)
*1
V
CE(sat)
V
BE
f
T
C
ob
R
on*2
1k鈩?/div>
I
B
=1mA
f=1kHz
V=0.3V
Conditions
I
C
= 1mA, I
B
= 0
V
CB
= 50V, I
E
= 0
V
EB
= 25V, I
C
= 0
V
CE
= 2V, I
C
= 4mA
V
CE
= 2V, I
C
= 4mA
I
C
= 30mA, I
B
= 3mA
V
CE
= 2V, I
C
= 4mA
V
CB
= 6V, I
E
= 鈥?mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
20
typ
max
+0.1
1.45鹵0.1
s
Features
Unit
V
碌A(chǔ)
碌A(chǔ)
0.1
0.1
500
0.5
0.99
0.1
0.6
80
7
1.0
2500
V
V
MHz
pF
鈩?/div>
Ratio between 2 elements
R
on
test circuit
V
B
V
V
V
A
R
on
=
V
B
!1000(鈩?
V
A
鈥揤
B
1
1
2
