Composite Transistors
XN111M
PNP epitaxial planer transistor
Unit: mm
For switching/digital circuits
2.8
-0.3
0.65鹵0.15
+0.2
+0.25
1.5
-0.05
5
0.65鹵0.15
1
0.95
2.9
-0.05
q
q
Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half.
1.9鹵0.1
+0.2
4
0.95
3
2
0.3
-0.05
0.4鹵0.2
0.16
-0.06
+0.1
1.1
-0.1
q
UN211M
脳
2 elements
0.8
s
Basic Part Number of Element
+0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Rating
Collector to emitter voltage
of
element Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25藲C)
Ratings
鈥?0
鈥?0
鈥?00
300
150
鈥?5 to +150
Unit
V
V
mA
mW
藲C
藲C
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
0 to 0.1
0.1 to 0.3
4 : Emitter
5 : Base (Tr1)
EIAJ : SC鈥?4A
Mini Type Pakage (5鈥損in)
Marking Symbol:
EK
Internal Connection
5
4
3
2
Tr1
1
Tr2
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer h
FE
ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
*1
(Ta=25藲C)
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
h
FE
(small/large)
*1
V
CE(sat)
V
OH
V
OL
R
1
R
1
/R
2
f
T
V
CB
= 鈥?0V, I
E
= 1mA, f = 200MHz
Conditions
I
C
= 鈥?0碌A(chǔ), I
E
= 0
I
C
= 鈥?mA, I
B
= 0
V
CB
= 鈥?0V, I
E
= 0
V
CE
= 鈥?0V, I
B
= 0
V
EB
= 鈥?V, I
C
= 0
V
CE
= 鈥?0V, I
C
= 鈥?mA
V
CE
= 鈥?0V, I
C
= 鈥?mA
I
C
= 鈥?0mA, I
B
= 鈥?0.3mA
V
CC
= 鈥?V, V
B
= 鈥?0.5V, R
L
= 1k鈩?/div>
V
CC
= 鈥?V, V
B
= 鈥?.5V, R
L
= 1k鈩?/div>
鈥?0%
2.2
0.047
80
MHz
鈥?.9
鈥?0.2
+30%
80
0.5
0.99
鈥?0.09
鈥?0.25
V
V
V
k鈩?/div>
min
鈥?0
鈥?0
鈥?0.1
鈥?0.5
鈥?0.2
typ
max
Unit
V
V
碌A(chǔ)
碌A(chǔ)
mA
Ratio between 2 elements
+0.1
1.45鹵0.1
s
Features
1
1
2
