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XN0F261 Datasheet

  • XN0F261

  • 複合デバイス － 複合トランジスタ

  • 3頁(yè)

  • ETC

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Composite Transistors
XN0F261
Silicon NPN epitaxial planar type
Unit: mm
For muting
鈻?/div>
Features
鈥?/div>
Two elements incorporated into one package
(Collector-coupled transistors with built-in resistor)
鈥?/div>
Reduction of the mounting area and assembly cost by one half
4
2.90
+0.20
鈥?.05
1.9
鹵0.1
(0.95) (0.95)
5
6
0.16
+0.10
鈥?.06
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
3
2
1
0.30
+0.10
鈥?.05
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
30
20
5
600
300
150
鈭?5
to
+150
Unit
V
V
V
mA
mW
擄C
擄C
0.50
+0.10
鈥?.05
10藲
1.1
+0.2
鈥?.1
(0.65)
1: Emitter (Tr1)
2: Collector
3: Emitter (Tr2)
EIAJ: SC-74
0 to 0.1
Marking Symbol: 6B
Internal Connection
4
5
6
Tr2
3
2
1.1
+0.3
鈥?.1
4: Base (Tr2)
5: N.C.
6: Base (Tr1)
Mini6-G1 Package
Tr1
1
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input resistance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
R
1
f
T
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
Conditions
I
C
=
1
碌A(chǔ),
I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
1
碌A(chǔ),
I
C
=
0
V
CB
=
30 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
50 mA
I
C
=
50 mA, I
B
=
2.5 mA
Min
30
20
5
Typ
Max
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
mV
k鈩?/div>
MHz
1
1
100
鈭?0%
600
80
3.3
200
+30%
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.4
鹵0.2
5藲
Publication date: July 2003
SJJ00228AED
1

XN0F261相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    Silicon NPN epitaxial planar type
    PANASONIC
  • 英文版
    Silicon NPN epitaxial planar type
    PANASONIC ...
  • 英文版
    複合デバイス － 複合トランジスタ
    ETC
  • 英文版
    Silicon NPN epitaxial planar type
    PANASONIC
  • 英文版
    Composite Device - Composite Transistors
    ETC
  • 英文版
    panasonic
  • 英文版
    Silicon NPN epitaxial planar type
    PANASONIC
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    Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual...
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    Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual...
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