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XN0D873(XN1D873) Datasheet

  • XN0D873(XN1D873)

  • Composite Device - Transistors with built-in Resistor

  • 52.06KB

  • 3頁

  • ETC

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Composite Transistors
XN0D873
(XN1D873)
Silicon N-channel junction FET
Unit: mm
For analog switching
s
Features
鈥?/div>
Two elements incorporated into one package (Drain-coupled FETs)
鈥?/div>
Reduction of the mounting area and assembly cost by one half
鈥?/div>
Low-frequency and low-noise J-FET
3
2.90
+0.20
鈥?.05
1.9
鹵0.1
(0.95) (0.95)
4
5
0.16
+0.10
鈥?.06
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
2
0.30
+0.10
鈥?.05
1
s
Basic Part Number of Element
鈥?/div>
2SK1103
脳
2 elements
10藲
1.1
+0.2
鈥?.1
(0.65)
Parameter
Rating
of
element
Total
Gate to drain voltage
Drain current
Gate current
Total power dissipation
Channel temperature
Storage temperature
Symbol
V
GDS
I
D
I
G
P
T
T
ch
T
stg
Rating
鈭?0
30
10
300
150
鈭?5
to
+150
Unit
V
mA
mA
mW
擄C
擄C
1: Gate (Tr1)
2: Gate (Tr2)
3: Source (Tr2)
0 to 0.1
s
Absolute Maximum Ratings
T
a
=
25擄C
1.1
+0.3
鈥?.1
4: Drain
5: Source (Tr1)
EIAJ: SC-74A
Mini5-G1 Package
Marking Symbol: OC
Internal Connection
3
4
5
FET2
FET1
2
1
s
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Gate to drain voltage
Drain current
Gate cutoff current
Gate to source cutoff voltage
Drain resistance (On)
Mutual conductance
Small-signal short-circuit
input capacitance
Small-signal short-circuit
output capacitance
Small-signal reverse
transfer capacitance
Symbol
V
GDS
I
DSS
I
GSS
V
GSC
R
DS(on)
gm
C
iss
C
oss
C
rss
Conditions
I
C
= 鈭?0 碌A(chǔ),
V
DS
=
0
V
DS
=
10 V, V
GS
=
0
V
GS
= 鈭?0
V, V
DS
=
0
V
DS
=
10 V, I
D
=
10
碌A(chǔ)
V
DS
=
10 mV, V
GS
=
0
V
DS
=
10 V, I
D
=
1 mA, f
=
1 kHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
1.8
鈭?.5
300
2.5
7
1.5
1.5
Min
鈭?0
0.2
6.0
鈭?0
鈭?.5
Typ
Max
Unit
V
mA
nA
V
鈩?/div>
mS
pF
pF
pF
Note) The part number in the parenthesis shows conventional part number.
Publication date: May 2002
SJJ00119BED
0.4
鹵0.2
5藲
1

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