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Composite Transistors

XN0C301 (XN1C301)

Silicon PNP epitaxial planer transistor (Tr1)

Silicon NPN epitaxial planer transistor (Tr2)

Unit: mm

For general amplification

2.90

+0.20

鈥?.05

1.9

鹵0.1

(0.95) (0.95)

0.16

+0.10

鈥?.06

1.50

+0.25

鈥?.05

s

Features

q

q

3

4

5

10藲

1.1

+0.2

鈥?.1

q

s

Absolute Maximum Ratings

Parameter

Collector to base voltage

Collector to emitter voltage

Tr1

Emitter to base voltage

Collector current

Peak collector current

Collector to base voltage

Collector to emitter voltage

Tr2

Emitter to base voltage

Collector current

Peak collector current

Total power dissipation

Overall Junction temperature

Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

T

T

j

T

stg

(Ta=25藲C)

Ratings

鈥?0

鈥?0

鈥?

鈥?00

鈥?00

60

50

7

100

200

300

150

鈥?5 to +150

Unit

V

V

V

mA

mA

V

V

V

mA

mA

mW

藲C

藲C

1 : Collector (Tr1)

2 : Collector (Tr2)

3 : Base (Tr2)

4 : Base (Tr1)

Emitter (Tr2)

5 : Emitter (Tr1)

EIAJ : SC鈥?4A

Mini5-G1 Package

Marking Symbol:

4R

Internal Connection

5

4

3

2

Tr1

1

Tr2

Note) The Part number in the Parenthesis shows conventional part number.

0 to 0.1

2SB709A (2SB0709A) + 2SD601A (2SD0601A)

1.1

+0.3

鈥?.1

s

Basic Part Number of Element

(0.65)

Two elements incorporated into one package.

(Tr1 base is connected to Tr2 emitter.)

Reduction of the mounting area and assembly cost by one half.

2.8

+0.2

鈥?.3

2

0.30

+0.10

鈥?.05

1

0.4

鹵0.2

5藲

1

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XN0C301相關(guān)型號PDF文件下載

• 型號
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  描述
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• XN0C301
  英文版
  Silicon PNP epitaxial planer transistor (Tr1)
  PANASONIC
  XN0C301
• XN0C301
  英文版
  Silicon PNP epitaxial planer transistor (Tr1)
  PANASONIC ...
  XN0C301
• XN0C301(XN...
  英文版
  複合デバイス － 複合トランジスタ
  ETC
  XN0C301(XN1C301)

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