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Composite Transistors

XN0B301

(XN1B301)

Silicon PNP epitaxial planer transistor (Tr1)

Silicon NPN epitaxial planer transistor (Tr2)

For general amplification

2.90

+0.20

鈥?.05

1.9

鹵0.1

(0.95) (0.95)

3

4

5

Unit: mm

0.16

+0.10

鈥?.06

1.50

+0.25

鈥?.05

2.8

+0.2

鈥?.3

s

q

q

Features

Two elements incorporated into one package.

(Tr1 emitter is connected to Tr2 base.)

Reduction of the mounting area and assembly cost by one half.

2

0.30

+0.10

鈥?.05

10藲

1

1.1

+0.2

鈥?.1

(0.65)

s

Basic Part Number of Element

q

s

Absolute Maximum Ratings

Parameter

Collector to base voltage

Collector to emitter voltage

Tr1

Emitter to base voltage

Collector current

Peak collector current

Collector to base voltage

Collector to emitter voltage

Tr2

Emitter to base voltage

Collector current

Peak collector current

Total power dissipation

Overall Junction temperature

Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

T

T

j

T

stg

(Ta=25藲C)

Ratings

鈥?0

鈥?0

鈥?

鈥?00

鈥?00

60

50

7

100

200

300

150

鈥?5 to +150

Unit

V

V

V

mA

mA

V

V

V

mA

mA

mW

藲C

藲C

1 : Collector (Tr1)

2 : Collector (Tr2)

3 : Emitter (Tr2)

4 : Base (Tr2)

Emitter (Tr1)

5 : Base (Tr1)

EIAJ : SC鈥?4A

Mini5-G1 Package

Marking Symbol:

4Q

Internal Connection

5

4

3

2

Tr1

1

Tr2

Note) The Part number in the Parenthesis shows conventional part number.

0 to 0.1

2SB709A (2SB0709A) +2SD601A (2SD0601A)

1.1

+0.3

鈥?.1

0.4

鹵0.2

5藲

1

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