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XN09D57 Datasheet

  • XN09D57

  • Silicon PNP epitaxial planar type (Tr) Silicon epitaxial pla...

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  • 4頁

  • PANASONIC

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Composite Transistors
XN09D57
Silicon PNP epitaxial planar type (Tr)
Silicon epitaxial planar type (SBD)
For DC-DC converter
鈻?/div>
Features
鈥?/div>
Two elements incorporated into one package (Tr
+
SBD)
鈥?/div>
Reduction of the mounting area and assembly cost by one half
鈥?/div>
Low collector-emitter saturation voltage V
CE(sat)
0.50
+0.10
鈥?.05
0.30
+0.10
鈥?.05
6
5
4
Unit: mm
0.16
+0.10
鈥?.06
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
1
2
3
鈻?/div>
Basic Part Number
鈥?/div>
XN9D57
+
MA3XD11
(0.95) (0.95)
1.9
鹵0.1
2.90
+0.20
鈥?.05
Display at No.1 lead
10擄
1.1
+0.2
鈥?.1
Tr
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage
(Collector open)
Collector current
Peak collector current
V
CBO
V
CEO
V
EBO
I
C
I
CP
V
R
V
RRM
I
F(AV)
I
FSM
P
T
T
j
T
stg
鈭?5
鈭?5
鈭?
鈭?.5
鈭?0
20
25
1
2
600
125
鈭?5
to
+125
V
V
V
A
A
V
V
A
A
1
2
1: Emitter
2: Base
3: Anode
0 to 0.1
Parameter
Symbol
Rating
Unit
4: Collector (Cathode)
5: Collector (Cathode)
6: Collector (Cathode)
Mini6-G1 Package
Marking Symbol: EW
Internal Connection
6
5
4
SBD
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Non-repetitive peak
forward surge current
Overall
Total power dissipation
*
Junction temperature
Storage temperature
mW
擄C
擄C
Note) *: Measuring on ceramic substrate at 15 mm
脳
15 mm
脳
0.6 mm
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
鈥?/div>
Tr
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
*
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1
h
FE2
V
CE(sat)
Conditions
I
C
= 鈭?0 碌A,
I
E
=
0
I
C
= 鈭?
mA, I
B
=
0
I
E
= 鈭?0 碌A,
I
C
=
0
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?
V, I
C
= 鈭?00
mA
V
CE
= 鈭?
V, I
C
= 鈭?.5
A
I
C
= 鈭?
A, I
B
= 鈭?0
mA
I
C
= 鈭?.5
A, I
B
= 鈭?0
mA
200
100
鈭?40
鈭?70
鈭?20
Min
鈭?5
鈭?5
鈭?
鈭?/div>
0.1
560
Typ
Max
Unit
V
V
V
碌A
錚?/div>
錚?/div>
mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: March 2004
SJJ00245CED
1.1
+0.3
鈥?.1
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
(0.65)
3
0.4
鹵0.2
5擄
1

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