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Composite Transistors

XN08081

(XN8081)

Silicon N-channel junction (FET)

Silicon NPN epitaxial planer transistor (Tr)

For analog switching

I

Features

鈥?/div>

Two elements incorporated into one package (J-FET

+

Tr)

鈥?/div>

Reduction of the mounting area and assembly cost by one half

鈥?/div>

Low-frequency and low-noise J-FET

4

2.90

+0.20

鈥?.05

1.9

鹵0.1

(0.95) (0.95)

5

6

1.50

+0.25

鈥?.05

2.8

+0.2

鈥?.3

Unit: mm

0.16

+0.10

鈥?.06

3

2

1

(0.65)

0.30

+0.10

鈥?.05

I

Basic Part Number of Element

鈥?/div>

2SK1103

+

UNR1213 (UN1213)

0.50

+0.10

鈥?.05

10擄

1.1

+0.2

鈥?.1

I

Absolute Maximum Ratings

T

a

=

25擄C

Parameter

FET

Gate to drain voltage

Drain current

Gate current

Tr

Collector to base voltage

Collector to emitter voltage

Collector current

Overall

Total power dissipation

Junction temperature

Storage temperature

Symbol

V

GDS

I

D

I

G

V

CBO

V

CEO

I

C

P

T

j

T

stg

Rating

鈭?0

20

10

50

100

300

150

鈭?5

to

+150

Unit

V

mA

V

mA

mW

擄C

1: Gate

2: Base

3: Emitter

EIAJ: SC-74

0 to 0.1

Marking Symbol: 9Z

Internal Connection

4

Tr

R2

47 k鈩?/div>

R1

47 k鈩?/div>

5

3

2

Note) The part number in the parenthesis shows conventional part number.

Publication date: September 2001

SJJ00244AED

1.1

+0.3

鈥?.1

4: Collector

5: Source

6: Drain

Mini6-G1 Package

6

FET

1

0.4

鹵0.2

5擄

1

型號(hào)

版本

描述

廠商

下載
XN08081

英文版

Composite Device - Composite Transistors

ETC

XN08081
XN08081

英文版

Composite Transistors

XN08081
XN08081

英文版

panasonic

XN08081

XN08081 Datasheet

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XN08081 Datasheet

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