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XN06501 Datasheet

  • XN06501

  • Silicon NPN epitaxial planar type

  • 85.22KB

  • 3頁

  • PANASONIC

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Composite Transistors
XN06501
(XN6501)
Silicon NPN epitaxial planar type
Unit: mm
For general amplification
鈻?/div>
Features
鈥?/div>
Two elements incorporated into one package
鈥?/div>
Reduction of the mounting area and assembly cost by one half
4
2.90
+0.20
鈥?.05
1.9
鹵0.1
(0.95) (0.95)
5
6
0.16
+0.10
鈥?.06
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
3
2
1
0.30
+0.10
鈥?.05
鈻?/div>
Basic Part Number
鈥?/div>
2SD0601A (2SD601A)
脳
2
0.50
+0.10
鈥?.05
10藲
1.1
+0.2
鈥?.1
0.65
鹵0.15
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Rating
60
50
7
100
200
300
150
鈭?5
to
+150
Unit
V
V
V
mA
mA
mW
擄C
擄C
Tr2
3
1: Collector (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ: SC-74
0 to 0.1
Marking Symbol: 5N
Internal Connection
4
5
6
1.1
+0.3
鈥?.1
4: Base (Tr2)
5: Emitter (Tr2)
6: Emitter (Tr1)
Mini6-G1 Package
Tr1
2
1
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
h
FE
ratio
*
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
h
FE(Small/
Large)
Conditions
I
C
=
10
碌A(chǔ),
I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
碌A(chǔ),
I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
CE
=
10 V, I
C
=
2 mA
V
CE
=
10 V, I
C
=
2 mA
I
C
=
100 mA, I
B
=
10 mA
V
CB
=
10 V, I
E
= 鈭?
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
60
50
7
Typ
Max
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
錚?/div>
0.1
100
160
0.50
0.99
0.1
150
3.5
0.3
460
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
f
T
C
ob
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2003
SJJ00108BED
0.4
鹵0.2
5藲
V
1

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