Composite Transistors
XN06401
(XN6401)
Silicon PNP epitaxial planer transistor
For general amplification
2.90
+0.20
鈥?.05
1.9
鹵0.1
(0.95) (0.95)
4
5
6
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
Unit: mm
0.16
+0.10
鈥?.06
G
3
2
1
(0.65)
0.30
+0.10
鈥?.05
0.50
+0.10
鈥?.05
I
Absolute Maximum Ratings
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of
Emitter to base voltage
element
Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
(Ta=25藲C)
Ratings
鈥?0
鈥?0
鈥?
鈥?00
鈥?00
300
150
鈥?5 to +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
1 : Collector (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC鈥?4
Mini6-G1 Package
Marking Symbol:
5O
Internal Connection
6
5
4
Tr1
1
2
3
Tr2
I
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Forward current transfer h
FE
ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
(Ta=25藲C)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
h
FE
(small/large)
*1
V
CE(sat)
f
T
C
ob
Conditions
I
C
= 鈥?0碌A(chǔ), I
E
= 0
I
C
= 鈥?mA, I
B
= 0
I
E
= 鈥?0碌A(chǔ), I
C
= 0
V
CB
= 鈥?0V, I
E
= 0
V
CE
= 鈥?0V, I
B
= 0
V
CE
= 鈥?0V, I
C
= 鈥?mA
V
CE
= 鈥?0V, I
C
= 鈥?mA
I
C
= 鈥?00mA, I
B
= 鈥?0mA
V
CB
= 鈥?0V, I
E
= 1mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
160
0.5
0.99
鈥?0.3
80
2.7
鈥?0.5
V
MHz
pF
min
鈥?0
鈥?0
鈥?
鈥?0.1
鈥?00
460
typ
max
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
Ratio between 2 elements
Note) The Part number in the Parenthesis shows conventional part number.
0 to 0.1
1.1
+0.3
鈥?.1
G
1.1
+0.2
鈥?.1
I
Basic Part Number of Element
2SB0709A(2SB709A)
脳
2 elements
10擄
5擄
G
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
0.4
鹵0.2
I
Features
1
1
2
3
4
