Composite Transistors
XN0611FH
(XN611FH)
Silicon PNP epitaxial planer transistor
Unit: mm
For switching/digital circuits
0.65鹵0.15
+0.2
2.8
鈥?.3
1.5
鈥?.05
6
+0.25
0.65鹵0.15
1
0.95
2.9
鈥?.05
G
G
Two elements incorporated into one package.
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half.
1.9鹵0.1
+0.2
5
2
0.95
4
3
I
Basic Part Number of Element
G
1.1
鈥?.1
0.4鹵0.2
I
Tr1
Absolute Maximum Ratings
(Ta=25藲C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Collector to base voltage
Symbol
V
CBO
V
CEO
I
C
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Ratings
鈥?0
鈥?0
鈥?00
鈥?0
鈥?0
鈥?00
300
150
鈥?5 to +150
Unit
V
V
mA
V
V
mA
mW
藲C
藲C
1 : Collector (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC鈥?4
Mini Type Package (6鈥損in)
Marking Symbol:
4S
Internal Connection
6
5
4
Tr1
1
2
3
Tr2
Collector to emitter voltage
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Tr2
Note.) The Part number in the Parenthesis shows conventional part number.
0 to 0.05
UNR111F(UN111F) + UNR111H(UN111H)
0.1 to 0.3
0.8
0.16
鈥?.06
+0.2
+0.1
1.45鹵0.1
I
Features
0.3
鈥?.05
0.5
鈥?.05
+0.1
+0.1
1