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Composite Transistors

XN04601

(XN4601)

Silicon NPN epitaxial planer transistor (Tr1)

Silicon PNP epitaxial planer transistor (Tr2)

Unit: mm

For general amplification

0.65鹵0.15

+0.2

2.8

鈥?.3

1.5

鈥?.05

6

+0.25

0.65鹵0.15

1

0.3

鈥?.05

0.95

0.95

G

1.9鹵0.1

G

Two elements incorporated into one package.

Reduction of the mounting area and assembly cost by one half.

2.9

鈥?.05

+0.2

5

2

4

3

G

2SD0601A(2SD601A) + 2SB0709A(2SB709A)

1.1

鈥?.1

0.4鹵0.2

I

Absolute Maximum Ratings

Parameter

Collector to base voltage

Collector to emitter voltage

Tr1

Emitter to base voltage

Collector current

Peak collector current

Collector to base voltage

Collector to emitter voltage

Tr2

Emitter to base voltage

Collector current

Peak collector current

Total power dissipation

Overall Junction temperature

Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

T

T

j

T

stg

(Ta=25藲C)

Ratings

60

50

7

100

200

鈥?0

鈥?0

鈥?

鈥?00

鈥?00

300

150

鈥?5 to +150

Unit

V

V

V

mA

mA

V

1 : Collector (Tr1)

2 : Base (Tr2)

3 : Emitter (Tr2)

4 : Collector (Tr2)

5 : Base (Tr1)

6 : Emitter (Tr1)

EIAJ : SC鈥?4

Mini Type Package (6鈥損in)

Marking Symbol:

5C

Internal Connection

6

Tr1

1

2

3

V

V

mA

mA

mW

藲C

藲C

5

4

Tr2

Note.) The Part number in the Parenthesis shows conventional part number.

0 to 0.05

0.1 to 0.3

0.8

0.16

鈥?.06

+0.2

I

Basic Part Number of Element

+0.1

1.45鹵0.1

I

Features

0.5

鈥?.05

+0.1

+0.1

1

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XN04601相關型號PDF文件下載

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  描述
  廠商
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• XN04130
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