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XN04504 Datasheet

  • XN04504

  • Silicon NPN epitaxial planar type

  • 3頁

  • PANASONIC

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Composite Transistors
XN04504
(XN4504)
Silicon NPN epitaxial planar type
For amplification of low-frequency output
4
2.90
+0.20
鈥?.05
1.9
鹵0.1
(0.95) (0.95)
5
6
Unit: mm
0.16
+0.10
鈥?.06
1.50
+0.25
鈥?.05
0.30
+0.10
鈥?.05
0.50
+0.10
鈥?.05
10藲
鈻?/div>
Basic Part Number
鈥?/div>
2SD1328
脳
2
1.1
+0.2
鈥?.1
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
25
20
12
0.5
1
300
150
鈭?5
to
+150
V
V
V
A
A
mW
擄C
擄C
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ : SC-74
0 to 0.1
Parameter
Symbol
Rating
Unit
Marking Symbol: 5X
Internal Connection
4
5
6
Tr2
1.1
+0.3
鈥?.1
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
(0.65)
鈥?/div>
Two elements incorporated into one package
鈥?/div>
Reduction of the mounting area and assembly cost by one half
3
2
1
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
Tr1
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
*1
3
Conditions
Min
25
20
12
2
Typ
1
Max
Unit
V
V
V
100
nA
錚?/div>
V
V
MHz
pF
鈩?/div>
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on
I
C
=
10
碌A(chǔ),
I
E
=
0
I
C
= 1
mA, I
B
=
0
I
E
=
10
碌A(chǔ),
I
C
=
0
V
CB
=
25 V, I
E
=
0
V
CE
=
2 V, I
C
=
0.5 A
V
CE
=
2 V, I
C
=
1 A
I
C
=
0.5 A, I
B
= 20
mA
I
C
=
0.5 A, I
B
= 50
mA
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
200
60
0.13
800
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
*1
0.40
1.2
200
10
1.0
Collector output capacitance
(Common base, input open circuited)
ON resistance
*2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
1 k鈩?/div>
*2: R
on
test circuit
I
B
=
1 mA
V
B
V
V
V
B
脳
1 000
(鈩?
V
A
鈭?/div>
V
B
f
=
1 kHz
V
=
0.3 V
V
A
R
on
=
Note) The part number in the parenthesis shows conventional part number.
SJJ00078BED
0.4
鹵0.2
鈻?/div>
Features
2.8
+0.2
鈥?.3
5藲
Publication date: February 2004
1

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