Composite Transistors
XN04504
(XN4504)
Silicon NPN epitaxial planer transistor
For amplification of low frequency output
2.90
+0.20
鈥?.05
1.9
鹵0.1
(0.95) (0.95)
4
5
6
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
Unit: mm
0.16
+0.10
鈥?.06
G
G
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
3
2
1
(0.65)
0.30
+0.10
鈥?.05
0.50
+0.10
鈥?.05
I
Basic Part Number of Element
G
10擄
1.1
+0.2
鈥?.1
1.1
+0.3
鈥?.1
2SD1328
脳
2 elements
I
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Rating
Emitter to base voltage
of
element Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
(Ta=25藲C)
Ratings
25
20
12
0.5
1
300
150
鈥?5 to +150
Unit
V
V
V
A
A
mW
藲C
藲C
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC鈥?4
Mini6-G1 Package
Marking Symbol:
5X
Internal Connection
6
5
4
Tr1
1
2
3
Tr2
I
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON Resistance
*1
*2
(Ta=25藲C)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on*2
1k鈩?/div>
Conditions
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CB
= 25V, I
E
= 0
V
CE
= 2V, I
C
= 500mA
*1
V
CE
= 2V, I
C
= 1A
*1
I
C
= 500mA, I
B
= 20mA
I
C
= 500mA, I
B
= 50mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
25
20
12
typ
0 to 0.1
max
Unit
V
V
V
碌A(chǔ)
0.1
200
60
0.13
0.4
1.2
200
10
1.0
800
MHz
pF
鈩?/div>
Pulse measurement
R
on
test circuit
I
B
=1mA
V
B
V
V
V
A
f=1kHz
V=0.3V
R
on
=
V
B
鉁?000(鈩?
V
A
鈥揤
B
Note) The Part number in the Parenthesis shows conventional part number.
0.4
鹵0.2
I
Features
5擄
V
V
1
1
2
3
