Composite Transistors
XN04503
(XN4503)
Silicon NPN epitaxial planer transistor
Unit: mm
For amplification of low frequency output
0.65鹵0.15
+0.2
2.8
鈥?.3
1.5
鈥?.05
6
+0.25
0.65鹵0.15
1
0.95
2.9
鈥?.05
G
G
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
1.9鹵0.1
+0.2
5
2
0.95
4
3
G
2SD0813(2SD813)
脳
2 elements
1.1
鈥?.1
0.4鹵0.2
I
Absolute Maximum Ratings
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of
Emitter to base voltage
element
Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
(Ta=25藲C)
Ratings
25
20
7
0.5
1
300
150
鈥?5 to +150
Unit
V
V
V
A
A
mW
藲C
藲C
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC鈥?4
Mini Type Package (6鈥損in)
Marking Symbol:
5Y
Internal Connection
6
5
4
Tr1
1
2
3
Tr2
I
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
(Ta=25藲C)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CB
= 25V, I
E
= 0
V
CE
= 20V, I
B
= 0
V
CE
= 2V, I
C
= 500mA*
V
CE
= 2V, I
C
= 1A*
I
C
= 500mA, I
B
= 20mA*
I
C
= 500mA, I
B
= 50mA*
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
150
6
65
50
0.2
0.4
1.2
V
V
MHz
pF
* Pulse measurement
min
25
20
7
0.1
1
350
typ
max
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Note.) The Part number in the Parenthesis shows conventional part number.
0 to 0.05
0.1 to 0.3
0.8
0.16
鈥?.06
I
Basic Part Number of Element
+0.2
+0.1
1.45鹵0.1
I
Features
0.3
鈥?.05
0.5
鈥?.05
+0.1
+0.1
1
1
2
3
