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XN04321 Datasheet

  • XN04321

  • Composite Device - Composite Transistors

  • 4頁

  • ETC

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Composite Transistors
XN04321
Silicon NPN epitaxial planar transistor (Tr1)
Silicon PNP epitaxial planar transistor (Tr2)
For switching/digital circuits
鈻?/div>
Features
鈥?/div>
Two elements incorporated into one package
(Transistors with built-in resistor)
鈥?/div>
Reduction of the mounting area and assembly cost by one half
4
2.90
+0.20
鈥?.05
1.9
鹵0.1
(0.95) (0.95)
5
6
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
Unit: mm
0.16
+0.10
鈥?.06
3
2
1
(0.65)
鈻?/div>
Basic Part Number of Element
鈥?/div>
UNR2221 (UN2221)
+
UNR2121 (UN2121)
0.30
+0.10
鈥?.05
0.50
+0.10
鈥?.05
10擄
1.1
+0.2
鈥?.1
Parameter
Tr1
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Collector current
Tr2
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Collector current
Overall
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
500
鈭?0
鈭?0
鈭?00
300
150
鈭?5
to
+150
Unit
V
V
mA
V
V
mA
mW
擄C
擄C
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
0 to 0.1
Marking Symbol: EB
Internal Connection
4
Tr2
Tr1
3
2
1
5
6
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
鈥?/div>
Tr1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
OH
V
OL
R
1
R
1
/ R
2
f
T
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
Conditions
I
C
=
10
碌A(chǔ),
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
100 mA
I
C
=
100 mA, I
B
=
5 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
500
鈩?/div>
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
500
鈩?/div>
鈭?0%
0.8
2.2
1.0
200
4.9
0.2
+30%
1.2
40
0.25
Min
50
50
1
1
5
Typ
Max
Unit
V
V
碌A(chǔ)
碌A(chǔ)
mA
錚?/div>
V
V
V
k鈩?/div>
錚?/div>
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) The part number in the parenthesis shows conventional part number.
Publication date: December 2002
SJJ00241AED
1.1
+0.3
鈥?.1
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
0.4
鹵0.2
5擄
1

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