Composite Transistors
XN2531
Silicon NPN epitaxial planer transistor
Unit: mm
For high frequency, oscillation and mixing
2.8
-0.3
0.65鹵0.15
+0.2
+0.25
1.5
-0.05
5
0.65鹵0.15
1
0.95
2.9
-0.05
q
q
Two elements incorporated into one package.
(Base-coupled transistors)
Reduction of the mounting area and assembly cost by one half.
1.9鹵0.1
+0.2
4
0.95
3
2
0.3
-0.05
0.4鹵0.2
0.16
-0.06
+0.1
1.1
-0.1
q
2SC3130
脳
2 elements
0.8
s
Basic Part Number of Element
+0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of
element Emitter to base voltage
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
(Ta=25藲C)
Ratings
15
10
3
50
200
150
鈥?5 to +150
Unit
V
V
V
mA
mW
藲C
藲C
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Emitter (Tr2)
0 to 0.1
0.1 to 0.3
4 : Base
5 : Emitter (Tr1)
EIAJ : SC鈥?4A
Mini Type Pakage (5鈥損in)
Marking Symbol:
9I
Internal Connection
5
4
3
2
Tr1
1
Tr2
s
Electrical Characteristics
Parameter
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Forward current transfer h
FE
ratio
h
FE2
/h
FE1
ratio
Collector to emitter saturation voltage
Collector output capacitance
Transition frequency
Collector to base parameter
Common base reverse transfer capacitance
*1
(Ta=25藲C)
Symbol
V
CEO
V
EBO
I
CBO
I
CEO
h
FE1
h
FE
(small/large)
*1
h
FE2
/h
FE1
V
CE(sat)
C
ob
f
T
r
bb
'路C
C
C
rb
Conditions
I
C
= 2mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
CE
= 4V, I
C
= 5mA
V
CE
= 4V, I
C
= 5mA
V
CE
= 4V, I
C
= 100碌A(chǔ)
V
CE
= 4V, I
C
= 5mA
I
C
= 20mA, I
B
= 4mA
V
CB
= 4V, I
E
= 0, f = 1MHz
V
CB
= 4V, I
E
= 鈥?mA, f = 200MHz
V
CB
= 4V, I
E
= 鈥?mA, f = 30MHz
V
CB
= 4V, I
E
= 0, f = 1MHz
1.4
0.9
1.9
11.8
0.25
75
0.5
0.75
200
0.99
1.6
0.5
1.1
2.5
13.5
0.35
V
pF
GHz
ps
pF
min
10
3
1
10
400
typ
max
Unit
V
V
碌A(chǔ)
碌A(chǔ)
Ratio between 2 elements
+0.1
1.45鹵0.1
s
Features
1
1
2
