Composite Transistors
XN0121M
(XN121M)
NPN epitaxial planer transistor
Unit: mm
For switching/digital circuits
2.90
+0.20
鈥?.05
1.9
鹵0.1
(0.95) (0.95)
0.16
+0.10
鈥?.06
1.50
+0.25
鈥?.05
G
2
0.30
+0.10
鈥?.05
10藲
1
(0.65)
1.1
+0.2
鈥?.1
G
UNR221M(UN221M)
脳
2 elements
I
Absolute Maximum Ratings
Parameter
Collector to base voltage
Rating
Collector to emitter voltage
of
element Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25藲C)
Ratings
50
50
100
300
150
鈥?5 to +150
Unit
V
V
mA
mW
藲C
藲C
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
4 : Emitter
5 : Base (Tr1)
EIAJ : SC鈥?4A
Mini5-G1 Pakage
Marking Symbol:
EM
Internal Connection
5
4
3
2
Tr1
1
Tr2
I
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer h
FE
ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
(Ta=25藲C)
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
h
FE
(small/large)
V
CE(sat)
V
OH
V
OL
R
1
R
1
/R
2
f
T
V
CB
= 10V, I
E
= 鈥?mA, f = 200MHz
Conditions
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 2mA, I
B
= 0
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 6V, I
C
= 0
V
CE
= 10V, I
C
= 5mA
V
CE
= 10V, I
C
= 5mA
I
C
= 10mA, I
B
= 0.3mA
V
CC
= 5V, V
B
= 0.5V, R
L
= 1k鈩?/div>
V
CC
= 5V, V
B
= 2.5V, R
L
= 1k鈩?/div>
鈥?0%
2.2
0.047
150
MHz
4.9
0.2
+30%
80
0.5
0.99
0.06
0.25
V
V
V
k鈩?/div>
min
50
50
0.1
0.5
0.2
typ
max
Unit
V
V
碌A(chǔ)
碌A(chǔ)
mA
Note) The Part number in the Parenthesis shows conventional part number.
0 to 0.1
1.1
+0.3
鈥?.1
I
Basic Part Number of Element
0.4
鹵0.2
G
Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half.
2.8
+0.2
鈥?.3
5藲
I
Features
3
4
5
1
1
2
3
