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XAM1214-130 Datasheet

  • XAM1214-130

  • RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS

  • 4頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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AM1214-130
RF POWER TRANSISTORS
L-BAND RADAR APPLICATIONS
TARGET DATA
鈥?/div>
REFRACTORY /GOLD METALLIZATION
鈥?/div>
EMITTER SITE BALLASTING
鈥?/div>
LOW RF THERMAL RESISTANCE
鈥?/div>
INPUT/OUTPUT MATCHING
鈥?/div>
OVERLAY GEOMETRY
鈥?/div>
METAL/CERAMIC HERMETIC PACKAGE
鈥?/div>
P
OUT
= 130 W MIN. WITH 8.0 dB GAIN
鈥?/div>
1215-1400 MHz OPERATION
M259
hermetically sealed
ORDER CODE
AM1214-130
BRANDING
XAM1214-130
PIN CONNECTION
1
DESCRIPTION
The AM1214-130 is a rugged, Class C common
base device designed as driver of AM1214-250 for
new L - Band medium & long pulse radar applica-
tions.
Minimal amplitude droop over a long pulse of 500
microsec. is guaranteed by a thermal design incor-
porating an overlay site-ballasted die geometry.
4
3
1. Collector
2. Base
2
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
擄
C)
Symbol
P
DISS
I
C
V
CBO
T
j
T
STG
Parameter
Power Dissipation (T
C
鈮?/div>
85擄C)*
Device Current*
Collector-Base Voltage
Operating Junction Temperature
Storage Temperature
Value
TBD
12
70
+250
-65 to +200
Unit
W
A
V
擄C
擄C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance*
TBD
擄C/W
* Applies only to rated RF amplifier operation: 150 microsec / 10%
July 2000
1/4

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