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N-Channel Enhancement-Mode

MOS Transistor

CORPORATION

2N7000 / BS170L

DESCRIPTION

The 2N7000 utilizes Calogic鈥檚 vertical DMOS technology. The

device is well suited for switching applications where B

V

of

60V and low on resistance (under 5 ohms) are required. The

2N7000 is housed in a plastic TO-92 package.

ORDERING INFORMATION

Part

2N7000

BS170L

X2N7000

Package

Plastic TO-92

Plastic TO-92

Sorted Chips in Carriers

Temperature Range

-55

o

C to +150

o

C

-55

o

C to +150

o

C

-55

o

C to +150

o

C

PIN CONFIGURATION

2N7000

3

1 SOURCE

2 GATE

3 DRAIN

2

1

2

BOTTOM VIEW

1

3

TO-92

(TO-226AA)

BS170L

3

1 DRAIN

2 GATE

3 SOURCE

2

1

2

BOTTOM VIEW

3

1

3

1

2

CD5

PRODUCT SUMMARY

V

(BR)DSS

(V)

60

60

r

DS(ON)

(鈩?

5

5

I

D

(A)

0.2

0.5

P/N

2N7000

BS170

next

X2N7000相關(guān)型號(hào)PDF文件下載

• 型號(hào)
  版本
  描述
  廠商
  下載
• X2N7000
  英文版
  N-Channel Enhancement-Mode MOS Transistor
  
  X2N7000
• X2N7000
  英文版
  N-Channel Enhancement-Mode MOS Transistor
  CALOGIC [C...
  X2N7000
• X2N7002
  英文版
  N-Channel Enhancement-Mode MOS Transistor
  
  X2N7002
• X2N7002
  英文版
  N-Channel Enhancement-Mode MOS Transistor
  CALOGIC [C...
  X2N7002

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