鈥?/div>
Low Cutoff Current
PIN CONFIGURATION
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
G, C
Package
Hermetic TO-52
Sorted Chips in Carriers
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
5018
D
S
2N5434
X2N5434
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified)
SYMBOL
I
GSS
BV
GSS
I
D(off)
V
GS(off)
I
DSS
r
DS(on)
V
DS(on)
r
ds(on)
C
iss
C
rss
t
d
t
r
t
off
t
f
PARAMETER
Gate Reverse Current
Gate-Source Breakdown Voltage
Drain Cutoff Current
Gate-Source Cutoff Voltage
Saturation Drain Current (Note 1)
Static Drain-Source ON Resistance
Drain-Source ON Voltage
Drain-Source ON Resistance
Common-Source Input Capacitance (Note2)
Common-Source Reverse Transfer Capacitance (Note 2)
Turn-ON Delay Time (Note 2)
Rise Time (Note 2)
Turn-OFF Delay Time (Note 2)
Fall Time (Note 2)
-1
30
10
100
10
30
15
4
1
6
30
ns
V
DD
= 1.5V,
V
GS
(on) = 0,
V
GS(off)
= -12V,
I
D(on)
= 10mA
2N5434
MIN
MAX
-200
-200
-25
200
200
-4
UNITS
pA
nA
V
pA
nA
V
mA
ohm
mV
ohm
pF
TEST CONDITIONS
V
GS
= -15V, V
DS
= 0
T
A
= 150
o
C
I
G
= -1碌A(chǔ), V
DS
= 0
V
DS
= 5V, V
GS
= -10V
T
A
= 150
o
C
V
DS
= 5V, I
D
= 3nA
V
DS
= 15V, V
GS
= 0
V
GS
= 0, I
D
= 10mA
V
GS
= 0, I
D
= 0 f = 1kHz
V
DS
= 0,
V
GS
= -10 V
f = 1MHz
NOTES: 1.
Pulse test required, pulsewidth 300碌s, duty cycle
鈮?%.
2.
For design reference only, not 100% tested.
1
2
