P-Channel Enhancement Mode
MOSFET Amplifier/Switch
CORPORATION
2N4352
FEATURES
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise noted)
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鹵30V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Storage Temperature Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Low ON Resistance
Low Capacitance
High Gain
P-Channel Complement to 2N4341
PIN CONFIGURATION
TO-72
ORDERING INFORMATION
D
C
G
S
Part
2N4352
X2N4352
Package
Hermetic TO-72
Sorted Chips in Carriers
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
1503
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified)
SYMBOL
V
(BR)DSX
I
DSS
I
GSS
V
GS(th)
V
DS(on)
I
D(on)
r
DS(on)
| y
fs
|
C
iss
C
rss
C
d(sub)
t
d1
t
r
t
d2
t
f
PARAMETER
Drain-Source Breakdown Voltage
Zero-Gate-Voltage Drain Current
Gate Reverse Current
Gate Threshold Voltage
Drain-Source On-Voltage
On-State Drain Current
Drain-Source Resistance
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Drain-Substrate Capacitance
Turn-On Delay
Rise Time
Turn-Off Delay
Fall Time
1000
5.0
1.3
5.0
45
65
60
100
ns
I
D
= -2.0mAdc, V
DS
= -10Vdc
V
GS
= -10V
pF
-3.0
600
-1.0
MIN
-25
-10
-10
鹵10
-5.0
-1.0
MAX
UNITS
Vdc
nAdc
碌A(chǔ)dc
pA
Vdc
V
mA
ohms
碌mho
TEST CONDITIONS
I
D
= -10碌A(chǔ), V
GS
= 0
V
DS
= -10V, V
GS
= 0, T
A
= 25
o
C
V
DS
= -10V, V
GS
= 0, T
A
= 150
o
C
V
GS
=
鹵30V,
V
DS
= 0
V
DS
= -10V, I
D
= -10碌A(chǔ)
I
D
= -2mA, V
GS
= -10V
V
GS
= -10V, V
DS
= -10V
V
GS
= -10V, I
D
= 0, f = 1.0kHz
V
DS
= -10V, I
D
= 2.0mA, f = 1.0kHz
V
DS
= -10V, V
GS
= 0, f = 140MHz
V
DS
= 0, V
GS
= 0, f = 140MHz
V
D(sub)
= -10V, f = 140kHz
CALOGIC CORPORATION,
237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025