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WSE128K16-35G2T Datasheet

  • WSE128K16-35G2T

  • 128KX16 SRAM/EEPROM MODULE

  • 15頁

  • ETC

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WSE128K16-XXX
128K
X
16 SRAM/EEPROM MODULE
FEATURES
s
Access Times of 35ns (SRAM) and 150ns (EEPROM)
s
Access Times of 45ns (SRAM) and 120ns (EEPROM)
s
Access Times of 70ns (SRAM) and 300ns (EEPROM)
s
Packaging
鈥?66 pin, PGA Type, 1.075" square HIP, Hermetic Ceramic
HIP (H1) (Package 400)
鈥?68 lead, Hermetic CQFP (G2T), 22mm (0.880") square
(Package 509). Designed to fit JEDEC 68 lead 0.990" CQFJ
footprint (Fig. 2)
s
128Kx16 SRAM
s
128Kx16 EEPROM
s
Organized as 128Kx16 of SRAM and 128Kx16 of EEPROM
Memory with separate Data Buses
s
Both blocks of memory are User Configurable as 256Kx8
s
Low Power CMOS
s
Commercial, Industrial and Military Temperature Ranges
PRELIMINARY*
s
TTL Compatible Inputs and Outputs
s
Built-in Decoupling Caps and Multiple Ground Pins for
Low Noise Operation
s
Weight - 13 grams typical
EEPROM MEMORY FEATURES
s
Write Endurance 10,000 Cycles
s
Data Retention at 25擄C, 10 Years
s
Low Power CMOS Operation
s
Automatic Page Write Operation
s
Page Write Cycle Time 10ms Max.
s
Data Polling for End of Write Detection
s
Hardware and Software Data Protection
s
TTL Compatible Inputs and Outputs
* This data sheet describes a product under development, not fully
characterized, and is subject to change without notice.
FIG.1
1
SD
8
SD
9
SD
10
A
13
A
14
A
15
A
16
NC
SD
0
SD
1
SD
2
11
PIN CONFIGURATION FOR WSE128K16-XH1X
PIN DESCRIPTION
TOP VIEW
12
SWE
2
SCS
2
GND
SD
11
A
10
A
11
A
12
V
CC
SCS
1
NC
SD
3
22
33
23
SD
15
SD
14
SD
13
SD
12
OE
NC
SWE
1
SD
7
SD
6
SD
5
SD
4
ED
8
ED
9
ED
10
A
6
A
7
NC
A
8
A
9
ED
0
ED
1
ED
2
44
34
V
CC
ECS
2
EWE
2
ED
11
A
3
A
4
A
5
EWE
1
ECS
1
GND
ED
3
55
45
ED
15
ED
14
ED
13
ED
12
A
0
A
1
A
2
ED
7
ED
6
ED
5
ED
4
66
8
8
8
8
ED
0-15
56
EEPROM Data Inputs/Outputs
SRAM Data Inputs/Outputs
Address Inputs
SRAM Write Enable
SRAM Chip Selects
Output Enable
Power Supply
Ground
Not Connected
EEPROM Write Enable
EEPROM Chip Select
SD
0-15
A
0-16
SWE
1-2
SCS
1-2
OE
V
CC
GND
NC
EWE
1-2
ECS
1-2
BLOCK DIAGRAM
S W E
1
S CS
1
OE
A
0
-
16
128K x 8
SRAM
128K x 8
SRAM
128K x 8
EEPROM
128K x 8
EEPROM
S W E
2
S CS
2
E W E
1
E CS
1
E W E
2
E CS
2
SD
0-7
SD
8-15
ED
0-7
ED
8-15
May 2001, Rev. 4
1
White Electronic Designs Corporation 鈥?(602) 437-1520 鈥?www.whiteedc.com

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