WMBT5551LT1
NPN Silicon
Transistor
1
BASE
2
EMITTER
Symbol
VCEO
VCBO
VEBO
IC
Value
160
180
COLLECTOR
3
3
1
2
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Unit
Vdc
Vdc
Vdc
mAdc
6.0
600
SOT鈥?23 (TO 鈥?236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board(1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
R
q
JA
TJ, Tstg
鈥?55 to +150
擄C/W
擄C
DEVICE MARKING
MMBT5550LT1 = M1F; MMBT5551LT1 = G1
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage(3)
(IC = 1.0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100擄C)
Emitter Cutoff Current
(VEB = .0 Vdc, IC = 0)
5
IEBO
鈥?/div>
50
V(BR)CEO
160
V(BR)CBO
180
V(BR)EBO
6.0
ICBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
nAdc
50
碌A(chǔ)dc
50
nAdc
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
鈥?/div>
鈥?/div>
Vdc
Vdc
Wing Shing Computer Components Co., (H.K .)L td.
Homepage:
http: / / www.wingshing.com
Tel: (8 52) 2341 9 27 6 Fax : (8 52) 27 9 7 8 153
E-mail: wsccltd@ hk star.com
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
1
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