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WFF2N60 Datasheet

  • WFF2N60

  • N-Channel MOSFET

  • 7頁

  • WISDOM

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Wisdom
Semiconductor
WFF2N60
N-Channel MOSFET
Features
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
R
DS(on)
(Max 5.0
鈩?/div>
)@V
GS
=10V
Gate Charge (Typical 9.5nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150擄C)
Symbol
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2. Drain
1. Gate
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3. Source
General Description
This Power MOSFET is produced using Wisdom鈥檚 advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
TO-220F
1
2
3
Absolute Maximum Ratings
(
*
Drain current limited by junction temperature)
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG,
T
J
T
L
Drain to Source Voltage
Continuous Drain Current(@T
C
= 25
擄C)
Continuous Drain Current(@T
C
= 100
擄C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@T
C
= 25 擄C)
Derating Factor above 25 擄C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 2)
(Note 1)
(Note 3)
(Note 1)
Parameter
Value
600
2.0*
1.3*
6.0*
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/擄C
擄C
擄C
鹵
30
120
5.4
4.5
23
0.18
- 55 ~ 150
300
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
Min.
-
-
Typ.
-
-
Max.
5.5
62.5
Units
擄C/W
擄C/W
Copyright@Wisdom Semiconductor Inc., All rights reserved.

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    N-Channel MOSFET
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