鈥?/div>
Sequential or Interleave
Burst length = programmable 1,2,4,8 or full page
Burst Read and Write
Multiple Burst Read and Single Write
DESCRIPTION
The WED416S16030A is 268,435,456 bits of synchro-
nous high data rate DRAM organized as 4 x 4,196,304
words x 16 bits. Synchronous design allows precise
cycle control with the use of system clock. I/O transac-
tions are possible on every clock cycle. Range of oper-
ating frequencies, programmable burst lengths and pro-
grammable latencies allow the same device to be use-
ful for a variety of high bandwidth, high performance
memory system applications.
Available in a 54 pin TSOP type II package the
WED416S16030A is tested over the industrial temp
range (-40擄C to +85擄C) providing a solution for rugged
main memory applications.
*This product is subject to change without notice.
鈻?/div>
DATA Mask Control per byte
鈻?/div>
Auto Refresh (CBR) and Self Refresh
鈥?/div>
8192 refresh cycles across 64ms
鈻?/div>
Automatic and Controlled Precharge Commands
鈻?/div>
Suspend Mode and Power Down Mode
鈻?/div>
Industrial Temperature Range
FIG. 1
P
IN
C
ONFIGURATION
V
DD
DQ
0
V
DDQ
DQ
1
DQ
2
V
SSQ
DQ
3
DQ
4
V
DDQ
DQ
5
DQ
6
V
SSQ
DQ
7
V
DD
LDQM
WE
CAS
RAS
CE
BA
0
BA
1
A
10
/AP
A
0
A
1
A
2
A
3
V
DD
P
IN
D
ESCRIPTION
V
SS
DQ
15
V
SSQ
DQ
14
DQ
13
V
DDQ
DQ
12
DQ
11
V
SSQ
DQ
10
DQ
9
V
DDQ
DQ
8
V
SS
NC/RFU
UDQM
CLK
CKE
A
12
A
11
A
9
A
8
A
7
A
6
A
5
A
4
V
SS
A
0-12
Address Inputs
BA
0
, BA
1
Bank Select Addresses
CE
WE
CLK
CKE
DQ
0-15
Chip Select
Write Enable
Clock Input
Clock Enable
Data Input/Output
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
TERMINAL CONNECTIONS
(TOP VEIW)
L(U)DQM Data Input/Output Mask
RAS
CAS
V
DD
V
DDQ
V
SS
V
SSQ
NC
Row Address Strobe
Column Address Strobe
Power (3.3V)
Data Output Power
Ground
Data Output Ground
No Connection
June 2002 Rev. 0
ECO #15332
1
White Electronic Designs Corporation 鈥?(508) 366-5151 鈥?www.whiteedc.com
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