W9N150V Datasheet

IC型號：
W9N150V
PDF描述：
N-channel 1500V - 2.2ヘ - 8A - TO-247 Very high voltage Powe...
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芯片廠家：
STMicroelectronics

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STW9N150

N-channel 1500V - 2.2鈩?- 8A - TO-247

Very high voltage PowerMESH鈩?Power MOSFET

TARGET SPECIFICATION

General features

Type

STW9N150

鈻?/div>

DSS

1500V

DS(on)

< 2.7鈩?/div>

350W

100% avalanche tested

Avalanche ruggedness

Gate charge minimized

Very low intrinsic capacitances

High speed switching

Very low on-resistance

TO-247

Description

Using the well consolidated high voltage MESH

OVERLAY鈩?process, STMicroelectronics has

designed an advanced family of Power MOSFETs

with outstanding performances. The strengthened

layout coupled with the Company鈥檚 proprietary

edge termination structure, gives the lowest

DS(on)

per area, unrivalled gate charge and

switching characteristics.

Internal schematic diagram

Applications

鈻?/div>

Switching application

Order code

Part number

STW9N150

Marking

W9N150V

Package

TO-247

Packaging

Tube

May 2007

Rev 1

1/9

www.st.com

This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.

型號

版本

描述

廠商

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W9N150V

英文版

N-channel 1500V - 2.2ヘ - 8A - TO-247 Very high voltage Powe...

W9N150V

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