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W4401DW

Epitaxial Planer Transistor

PNP Silicon

3

2

1

6 5

4

1

4

5

6

2

3

SOT-363(SC-88)

PNP+PNP

Maximum Ratings

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-Continuous

Symbol

VCEO

VCBO

VEBO

IC

Value

-50

-60

-6.0

-150

Unit

Vdc

Vdc

Vdc

mAdc

Thermal Characteristics

Characteristics

Total Device Dissipation T

A

=25 C

Thermal Resistance, Junction to Ambient

Junction and Storage, Temperature

(1)

Symbol

PD

R

胃

JA

TJ,Tstg

Max

380

328

-55 to +150

Unit

mW

C/W

C

Device Marking

W4401DW=5K

Electrical Characteristics

(T

A

=25 C Unless Otherwise noted)

Symbol

Min

Max

Unit

Characteristics

Off C har acter istics

Collector-Emitter Breakdown Voltage

(2)

(I

C

=-1.0mAdc.I

B

=0)

Collector-Base Breakdown Voltage (I

C

=-50 uAdc, I

E

=0)

Emitter-Base Breakdown Voltage (I

E

=-50 uAdc, I

C

=0)

Emitter Cutoff Current (V

EB

=-6.0 Vdc)

Collector Cutoff Current (V

CB

=-60Vdc)

1. Device Mounted FR4 glass epoxy printed circuit board using the minimun recommended footprint.

2. Pulse Test:Pulse Width

<

300uS, Duty Cycle

<

2.0%

=

=

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

EBO

I

CBO

-50

-60

-6.0

-

-

-

-0.1

-0.1

Vdc

Vdc

Vdc

nAdc

nAdc

-

-

WEITRON

http://www.weitron.com.tw

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• W4401DW
  英文版
  Epitaxial Planer Transistor PNP Silicon
  
  W4401DW
• W4401DW
  英文版
  Epitaxial Planer Transistor PNP Silicon
  WEITRON [W...
  W4401DW

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